Effect of Surface Energy on Pentacene Thin-Film Growth and Organic Thin Film Transistor Characteristics

نویسندگان

  • Hsiao-Wen Zan
  • Cheng-Wei Chou
چکیده

In this study, we discuss pentacene-based organic thin films grown on a self-assembled monolayer (SAM)-treated dielectric with various functional groups and molecular lengths. The functional groups and molecular lengths on the dielectric surface were modified using a SAM treatment followed by ultra violet (UV) light exposure. Surface energy was used to observe the surface polarity variation during UV light exposure. After pentacene deposition, the growth modes of pentacene on surfaces with various surface characteristics were analyzed by atomic force microscope (AFM) and X-ray diffraction (XRD). The structure of pentacene growth on different surfaces with various surface characteristics was carefully examined. Organic thin film transistors fabricated with pentacene grown on various surfaces were characterized. When the polar components of surface energy were decreased, device mobility was increased from 0.04 to 0.21 cm V 1 s 1 and the threshold voltage shifted from 13:55 to 3:2V. # 2009 The Japan Society of Applied Physics

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Air-flow navigated crystal growth for TIPS pentacene-based organic thin-film transistors

1566-1199/$ see front matter 2012 Elsevier B.V http://dx.doi.org/10.1016/j.orgel.2012.05.044 ⇑ Corresponding author. Tel.: +1 205 348 9930; fa E-mail address: [email protected] (D. Li). 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS pentacene) is a promising active channel material of organic thin-film transistors (OTFTs) due to its solubility, stability, and high mobility. However, the grow...

متن کامل

Organic Thin-Film Transistors and TIPS-Pentacene

TIPS-Pentacene, an organic semiconductor characterized by its good electronic properties, solubility, and stability, is used primarily in organic thin-film transistors (OTFT). This research seeks to create an OTFT by crafting a stencil, depositing the source and drain onto a substrate’s surface, and processing TIPS-Pentacene onto the channel between them. In addition, if time permits, the elect...

متن کامل

Polymer gate dielectric surface viscoelasticity modulates pentacene transistor performance.

Nanoscopically confined polymer films are known to exhibit substantially depressed glass transition temperatures (Lg's) as compared to the corresponding bulk materials. We report here that pentacene thin films grown on polymer gate dielectrics at temperatures well below their bulk Tg's exhibit distinctive and abrupt morphological and microstructural transitions and thin-film transistor (TFT) pe...

متن کامل

Molecular structure of extended defects in monolayer-scale pentacene thin films

The growth of pentacene thin films for applications in thin-film transistors and other organic electronic devices results in a variety of extended structural defects including dislocations, grain boundaries, and stacking faults. We have used scanning tunneling microscopy STM to probe the molecular-scale structure of grain boundaries and stacking faults in a pentacene thin film on a Si 001 surfa...

متن کامل

Structural and Electronic Properties of Pentacene at Organic-inorganic Interfaces

Organic/inorganic interfaces play a crucial role in organic electronic devices such as organic field effect transistors (OFETs), organic light emitting diodes (OLEDs) and organic photovoltaics (OPVs). The properties of organic thin-film transistors depend on the transport of charges induced at the semiconductor/gate insulator interface. Structural defects near this interface influence the charg...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2009